更新于 2025-09-17电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 1200V
- Vce(ON)@25℃(typ): 2.1V
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- 超高速(8-30kHz)IGBT模块,Vces: 600V
- 超高速(8-30kHz)IGBT模块,Vces: 600V,Ic@100℃: 90A,Vce(ON)@25℃(typ): 1.70V
- 超高速(8-30kHz)IGBT模块,Vces: 600V,Ic@100℃: 8.9A,Vce(ON)@25℃(typ): 1.95V
电气特性 Features
| Configuration: | Single Quad Collector Triple Emitter |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 400 V |
| Maximum Continuous Collector Current: | 100 A |
| Maximum Gate Emitter Voltage: | ±4 V |
| Mounting: | Surface Mount |
| Operating Temperature: | -40 to 150 ℃ |
| Rad Hard: | No |
电气特性 Features
| Configuration: | Single Dual Emitter |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 80 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Screw |
| Rad Hard: | No |