电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 1200V
- Vce(ON)@25℃(typ): 3.15V
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 600 V |
Maximum Continuous Collector Current: | 20 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Surface Mount |
Operating Temperature: | -40 to 175 ℃ |
Rad Hard: | No |
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 360 V |
Maximum Continuous Collector Current: | 25 A |
Maximum Gate Emitter Voltage: | 12 V |
Mounting: | Surface Mount |
Rad Hard: | No |
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 650 V |
Maximum Continuous Collector Current: | 80 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
Operating Temperature: | -55 to 175 ℃ |
Rad Hard: | No |
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 600 V |
Maximum Continuous Collector Current: | 16 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |