更新于 2025-06-12电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 1200V
- Vce(ON)@25℃(typ): 3.1V
相关文章
- WARP 30-150kHz IGBT模块,Vces: 600V,Ic@100℃: 42A,Vce(ON)@25℃(typ): 2.00V
- 超高速(8-30kHz)IGBT模块,Vces: 600V,Ic@100℃: 6.8A,Vce(ON)@25℃(typ): 2.10V
- WARP 30-150kHz IGBT模块,Vces: 600V,Ic@100℃: 20A,Vce(ON)@25℃(typ): 2.05V
- 高速(1-8kHz)IGBT模块,Vces: 600V,Ic@100℃: 8.6A,Vce(ON)@25℃(typ): 1.88V
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 9.6 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |