电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 1200V
- Ic@100℃: 35A
- Vce(ON)@25℃(typ): 1.90V
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 370 V |
Maximum Continuous Collector Current: | 20 A |
Maximum Gate Emitter Voltage: | 10 V |
Mounting: | Surface Mount |
Rad Hard: | No |