更新于 2025-06-12电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 1200V
- Ic@100℃: 35A
- Vce(ON)@25℃(typ): 1.90V
相关文章
- 超高速(8-30kHz)IGBT模块,Vces: 1200V,Vce(ON)@25℃(typ): 1.69V
- 超高速(8-30kHz)IGBT模块,Vces: 600V,Ic@100℃: 7.8A,Vce(ON)@25℃(typ): 2.02V
- 超高速(8-30kHz)IGBT模块,Vces: 600V,Ic@100℃: 7.6A,Vce(ON)@25℃(typ): 2.10V
- 低导通压降(Vceon)IGBT模块,Vces: 650V,Ic@100℃: 40A,Vce(ON)@25℃(typ): 1.70V
电气特性 Features
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 370 V |
| Maximum Continuous Collector Current: | 20 A |
| Maximum Gate Emitter Voltage: | 10 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |