IRG8CH76K10F
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 1200V
- Ic@100℃: 75A
- Vce(ON)@25℃(typ): 1.70V
更新于 2026-06-25AUIRGP35B60PD
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 60 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
IGB50N60TATMA1
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 100 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |
IRG4PC30W
电气特性 Features
- WARP 30-150kHz IGBT模块
- Vces: 600V
- Ic@100℃: 12A
- Vce(ON)@25℃(typ): 2.10V
IRG4CC40UB
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 600V
- Vce(ON)@25℃(typ): 1.72V
IRG4RC10UTRPBF
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 8.5 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |
IRG4PF50WPBF
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 900 V |
| Maximum Continuous Collector Current: | 51 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
IRG4PC40KPBF
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 42 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
IRG4BC20W
电气特性 Features
- WARP 30-150kHz IGBT模块
- Vces: 600V
- Ic@100℃: 6.5A
- Vce(ON)@25℃(typ): 2.16V
IRG4PH50KD
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 1200V
- Ic@100℃: 24A
- Vce(ON)@25℃(typ): 2.77V
IRGP6660D
电气特性 Features
- IGBT模块(8-30kHz)
- Vces: 600V
- Ic@100℃: 60A
- Vce(ON)@25℃(typ): 1.65V
IRG4PF50WDPBF
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 900 V |
| Maximum Continuous Collector Current: | 51 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
IRG7CH35UEF
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 1200V
- Vce(ON)@25℃(typ): 1.90V
FGA60N65SMD
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 650 V |
| Maximum Continuous Collector Current: | 120 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
STGB10NB37LZT4
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 440 V |
| Maximum Continuous Collector Current: | 20 A |
| Maximum Gate Emitter Voltage: | 16 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |