IRGP4062DPBF

IRGP4062DPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:48 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole

IHW15T120

IHW15T120

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:30 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

NGB8245NT4G

NGB8245NT4G

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:500 V
Maximum Continuous Collector Current:20 A
Maximum Gate Emitter Voltage:±15 V
Mounting:Surface Mount
Rad Hard:No

IRGS15B60K

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 15A
  • Vce(ON)@25℃(typ): 1.80V

IHW20N120R3

IHW20N120R3

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:40 A
Maximum Gate Emitter Voltage:±25 V
Mounting:Through Hole
Rad Hard:No

IRG7PG42UD

电气特性 Features

  • IGBT模块(8-30kHz)
  • Vces: 1000V
  • Ic@100℃: 45A
  • Vce(ON)@25℃(typ): 1.7V

IRGP20B120U-E

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 1200V
  • Ic@100℃: 20A
  • Vce(ON)@25℃(typ): 3.05V

FGH15T120SMD_F155

FGH15T120SMD_F155

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:30 A
Maximum Gate Emitter Voltage:±25 V
Mounting:Through Hole
Operating Temperature:-55 to 175 ℃
Rad Hard:No

IRG4PC50UPBF

IRG4PC50UPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:55 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole

IGP20N60H3XKSA1

IGP20N60H3XKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:40 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRG4CC40UB

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Vce(ON)@25℃(typ): 1.72V

IRG4PH50UD

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 1200V
  • Ic@100℃: 24A
  • Vce(ON)@25℃(typ): 2.78V

IRGC4061F

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Vce(ON)@25℃(typ): 1.65V

IRG4BC15UD-L

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 7.8A
  • Vce(ON)@25℃(typ): 2.02V

IRGB4630DPBF

IRGB4630DPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:47 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No