电气特性 Features
- IGBT模块(8-30kHz)
- Vces: 1000V
- Ic@100℃: 45A
- Vce(ON)@25℃(typ): 1.7V
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 600 V |
Maximum Continuous Collector Current: | 47 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
Operating Temperature: | -40 to 175 ℃ |
Rad Hard: | No |
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 600 V |
Maximum Continuous Collector Current: | 12 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Surface Mount |
Rad Hard: | No |
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 600 V |
Maximum Continuous Collector Current: | 100 A |
Maximum Gate Emitter Voltage: | ±30 V |
Mounting: | Through Hole |
Operating Temperature: | -55 to 150 ℃ |
Rad Hard: | No |