电气特性 Features
- IGBT模块(8-30kHz)
- Vces: 1000V
- Ic@100℃: 45A
- Vce(ON)@25℃(typ): 1.7V
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 430 V |
| Maximum Continuous Collector Current: | 41 A |
| Maximum Gate Emitter Voltage: | ±10 V |
| Mounting: | Surface Mount |
| Operating Temperature: | -55 to 175 ℃ |
| Rad Hard: | No |