IGW30N100T

IGW30N100T

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1000 V
Maximum Continuous Collector Current:60 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRGB30B60K

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 50A
  • Vce(ON)@25℃(typ): 1.95V

IRGB4620DPBF

IRGB4620DPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:32 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No

IRG4PC40U

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 20A
  • Vce(ON)@25℃(typ): 1.72V

IRGP4630D

电气特性 Features

  • 低导通压降(Vceon)IGBT模块
  • Vces: 600V
  • Ic@100℃: 30A
  • Vce(ON)@25℃(typ): 1.65V

FGB40N60SM

FGB40N60SM

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:80 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No

NGTB25N120IHLWG

NGTB25N120IHLWG

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:50 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

FGH40N60SMDF

FGH40N60SMDF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:80 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

FGD3040G2_F085

FGD3040G2_F085

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:390 V
Maximum Continuous Collector Current:25.6 A
Maximum Gate Emitter Voltage:±10 V
Mounting:Surface Mount
Rad Hard:No

GT60J323(Q)

GT60J323(Q)

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:60 A
Maximum Gate Emitter Voltage:±25 V
Mounting:Through Hole
Rad Hard:No

IRG4RC10UD

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 5A
  • Vce(ON)@25℃(typ): 2.15V

FGA15N120ANTDTU_F109

FGA15N120ANTDTU_F109

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:24 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

FGD3440G2_F085

FGD3440G2_F085

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:390 V
Maximum Continuous Collector Current:26.9 A
Maximum Gate Emitter Voltage:±10 V
Mounting:Surface Mount
Rad Hard:No

IRG7CH81K10EF-R

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 1200V
  • Vce(ON)@25℃(typ): 1.15V

IRGS6B60KDPBF

IRGS6B60KDPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:18 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No