IGB01N120H2
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 3.2 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
更新于 2026-07-01IRGB4715D
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 650V
- Ic@100℃: 15A
- Vce(ON)@25℃(typ): 1.7V
IRG4PC50KDPBF
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 52 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
IRG4IBC30KDPBF
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 17 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
IRG4PSC71KD
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 600V
- Ic@100℃: 60A
- Vce(ON)@25℃(typ): 1.83V
IRGP20B60PD
电气特性 Features
- WARP 30-150kHz IGBT模块
- Vces: 600V
- Ic@100℃: 22A
- Vce(ON)@25℃(typ): 2.50V
IRGB4056DPBF
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 24 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
IGB15N60T
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 30 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
IGB50N60T
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 100 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
FGAF40N60UFDTU
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 40 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
IRGB5B120KD
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 1200V
- Ic@100℃: 6.0A
- Vce(ON)@25℃(typ): 2.75V
IRGS4610DPBF
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 16 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
| Operating Temperature: | -40 to 175 ℃ |
| Rad Hard: | No |
FGD3245G2_F085
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电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 480 V |
| Maximum Continuous Collector Current: | 23 A |
| Maximum Gate Emitter Voltage: | ±10 V |
| Mounting: | Surface Mount |
| Operating Temperature: | -40 to 175 ℃ |
| Rad Hard: | No |
IGW60T120FKSA1
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 100 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |