IRGC4064B

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Vce(ON)@25℃(typ): 1.6V

IRGB14C40LPBF

IRGB14C40LPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:370 V
Maximum Continuous Collector Current:20 A
Maximum Gate Emitter Voltage:10 V
Mounting:Through Hole
Rad Hard:No

IRGC4060B

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Vce(ON)@25℃(typ): 1.55V

IKB20N60TATMA1

IKB20N60TATMA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:40 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No

NGB18N40ACLBT4G

NGB18N40ACLBT4G

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:430 V
Maximum Continuous Collector Current:18 A
Maximum Gate Emitter Voltage:18 V
Mounting:Surface Mount
Rad Hard:No

IRGP4630D

电气特性 Features

  • 低导通压降(Vceon)IGBT模块
  • Vces: 600V
  • Ic@100℃: 30A
  • Vce(ON)@25℃(typ): 1.65V

IRG4PC50F

电气特性 Features

  • 高速(1-8kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 39A
  • Vce(ON)@25℃(typ): 1.45V

IKW75N60TFKSA1

IKW75N60TFKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:80 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRGP4620D

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 20A
  • Vce(ON)@25℃(typ): 1.55V

IRG4PSC71UDPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:85 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole

IRG4CC30FB

电气特性 Features

  • 高速(1-8kHz)IGBT模块
  • Vces: 600V
  • Vce(ON)@25℃(typ): 1.59V

IRGC4640B

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 40A
  • Vce(ON)@25℃(typ): 1.60V

IRG4CC50WB

电气特性 Features

  • WARP 30-150kHz IGBT模块
  • Vces: 600V
  • Vce(ON)@25℃(typ): 1.93V

STGW40H65DFB

STGW40H65DFB

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:80 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-55 to 175 ℃
Rad Hard:No

IRGB4715D

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 650V
  • Ic@100℃: 15A
  • Vce(ON)@25℃(typ): 1.7V