FGH40N60UFDTU

FGH40N60UFDTU

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:80 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRG4PSC71UD

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 60A
  • Vce(ON)@25℃(typ): 1.67V

IRGC4274B

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 650V

IGD01N120H2BUMA1

IGD01N120H2BUMA1

电气特性 Features

  • 绝缘栅双极型晶体管单管
  • Trans IGBT Chip N-CH 1.2KV 3.2A

IRG4CC80SB

电气特性 Features

  • DC-1kHz(标准)IGBT模块
  • Vces: 600V

IRGP4640PBF

IRGP4640PBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:65 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No

FGPF50N30TTU

FGPF50N30TTU

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:300 V
Maximum Gate Emitter Voltage:±30 V
Mounting:Through Hole
Rad Hard:No

IKP04N60TXKSA1

IKP04N60TXKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:8 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRGP50B60PD

电气特性 Features

  • WARP 30-150kHz IGBT模块
  • Vces: 600V
  • Ic@100℃: 42A
  • Vce(ON)@25℃(typ): 2.00V

FGD3N60LSDTM

FGD3N60LSDTM

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:6 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No

IRG7PH42UD1PBF

IRG7PH42UD1PBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:85 A
Maximum Gate Emitter Voltage:±30 V
Mounting:Through Hole
Rad Hard:No

STGWT60H65FB

STGWT60H65FB

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:80 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No

SGP02N120

SGP02N120

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:6.2 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole

IRGS4064D

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 10A
  • Vce(ON)@25℃(typ): 1.60V

IGP50N60T

IGP50N60T

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:100 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole