IRGC4064B
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 600V
- Vce(ON)@25℃(typ): 1.6V
IRGB14C40LPBF

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 370 V |
Maximum Continuous Collector Current: | 20 A |
Maximum Gate Emitter Voltage: | 10 V |
Mounting: | Through Hole |
Rad Hard: | No |
IRGC4060B
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 600V
- Vce(ON)@25℃(typ): 1.55V
IKB20N60TATMA1

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 600 V |
Maximum Continuous Collector Current: | 40 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Surface Mount |
Rad Hard: | No |
NGB18N40ACLBT4G

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 430 V |
Maximum Continuous Collector Current: | 18 A |
Maximum Gate Emitter Voltage: | 18 V |
Mounting: | Surface Mount |
Rad Hard: | No |
IRGP4630D
电气特性 Features
- 低导通压降(Vceon)IGBT模块
- Vces: 600V
- Ic@100℃: 30A
- Vce(ON)@25℃(typ): 1.65V
IRG4PC50F
电气特性 Features
- 高速(1-8kHz)IGBT模块
- Vces: 600V
- Ic@100℃: 39A
- Vce(ON)@25℃(typ): 1.45V
IKW75N60TFKSA1

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 600 V |
Maximum Continuous Collector Current: | 80 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
Rad Hard: | No |
IRGP4620D
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 600V
- Ic@100℃: 20A
- Vce(ON)@25℃(typ): 1.55V
IRG4PSC71UDPBF
电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 600 V |
Maximum Continuous Collector Current: | 85 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
IRG4CC30FB
电气特性 Features
- 高速(1-8kHz)IGBT模块
- Vces: 600V
- Vce(ON)@25℃(typ): 1.59V
IRGC4640B
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 600V
- Ic@100℃: 40A
- Vce(ON)@25℃(typ): 1.60V
IRG4CC50WB
电气特性 Features
- WARP 30-150kHz IGBT模块
- Vces: 600V
- Vce(ON)@25℃(typ): 1.93V
STGW40H65DFB

电气特性 Features
Configuration: | Single |
Channel Type: | N |
Maximum Collector Emitter Voltage: | 650 V |
Maximum Continuous Collector Current: | 80 A |
Maximum Gate Emitter Voltage: | ±20 V |
Mounting: | Through Hole |
Operating Temperature: | -55 to 175 ℃ |
Rad Hard: | No |
IRGB4715D
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 650V
- Ic@100℃: 15A
- Vce(ON)@25℃(typ): 1.7V