IRG4BC40K

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 25A
  • Vce(ON)@25℃(typ): 2.10V

IRGR3B60KD2

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 4.2A
  • Vce(ON)@25℃(typ): 1.90V

IGP01N120H2XKSA1

IGP01N120H2XKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:3.2 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole

IRG4PC50FPBF

IRG4PC50FPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:70 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole

IRGC2B60KB

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 2A
  • Vce(ON)@25℃(typ): 2.00V

FGH50N6S2D

FGH50N6S2D

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:75 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IKW15N120H3FKSA1

IKW15N120H3FKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:30 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IHW30N160R2

IHW30N160R2

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1600 V
Maximum Continuous Collector Current:60 A
Maximum Gate Emitter Voltage:±25 V
Mounting:Through Hole

IKP04N60TXKSA1

IKP04N60TXKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:8 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

NGB8204ANT4G

NGB8204ANT4G

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:430 V
Maximum Continuous Collector Current:18 A
Maximum Gate Emitter Voltage:18 V
Mounting:Surface Mount
Rad Hard:No

IRG4RC10UDPBF

IRG4RC10UDPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:8.5 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No

FGH80N60FDTU

FGH80N60FDTU

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:80 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRGS4620DPBF

IRGS4620DPBF

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:32 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Operating Temperature:-40 to 175 ℃
Rad Hard:No

IRGP4750D

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 650V
  • Ic@100℃: 50A
  • Vce(ON)@25℃(typ): 1.7V

HGTG30N60A4D

HGTG30N60A4D

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:75 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No