NGB8245NT4G

NGB8245NT4G

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:500 V
Maximum Continuous Collector Current:20 A
Maximum Gate Emitter Voltage:±15 V
Mounting:Surface Mount
Rad Hard:No

IRGC4630B

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 30A
  • Vce(ON)@25℃(typ): 1.65V

IRG8CH50K10F

电气特性 Features

  • 低导通压降(Vceon)IGBT模块
  • Vces: 1200V
  • Ic@100℃: 50A
  • Vce(ON)@25℃(typ): 1.70V

IRGC4061F

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Vce(ON)@25℃(typ): 1.65V

FGA25S125P_SN00337

FGA25S125P_SN00337

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1250 V
Maximum Continuous Collector Current:50 A
Maximum Gate Emitter Voltage:±25 V
Mounting:Through Hole
Operating Temperature:-55 to 175 ℃
Rad Hard:No

IRGC4055B

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 300V

IGB01N120H2ATMA1

IGB01N120H2ATMA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:3.2 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No

IRG4RC10U

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 5A
  • Vce(ON)@25℃(typ): 2.15V

IRG7PH46UD

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 1200V
  • Ic@100℃: 57A
  • Vce(ON)@25℃(typ): 1.70V

IRG7CH42UEF

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 1200V
  • Vce(ON)@25℃(typ): 1.69V

IGW30N100TFKSA1

IGW30N100TFKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1000 V
Maximum Continuous Collector Current:60 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

NGB8204ANT4G

NGB8204ANT4G

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:430 V
Maximum Continuous Collector Current:18 A
Maximum Gate Emitter Voltage:18 V
Mounting:Surface Mount
Rad Hard:No

FGH40T120SMD_F155

FGH40T120SMD_F155

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:80 A
Maximum Gate Emitter Voltage:±25 V
Mounting:Through Hole
Operating Temperature:-55 to 175 ℃
Rad Hard:No

IKQ100N60TAXKSA1

IKQ100N60TAXKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:160 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No

FGA30N120FTDTU

FGA30N120FTDTU

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:60 A
Maximum Gate Emitter Voltage:±25 V
Mounting:Through Hole
Rad Hard:No