IKP06N60TXKSA1

IKP06N60TXKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:12 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRGP4262D

电气特性 Features

  • 低导通压降(Vceon)IGBT模块
  • Vces: 650V
  • Ic@100℃: 40A
  • Vce(ON)@25℃(typ): 1.70V

IGZ50N65H5XKSA1

电气特性 Features

Configuration:Single Dual Emitter
Channel Type:N
Maximum Collector Emitter Voltage:650 V
Maximum Continuous Collector Current:85 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No

FGH60N60SFDTU

FGH60N60SFDTU

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:120 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRGS10B60KD

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 12A
  • Vce(ON)@25℃(typ): 1.80V

SGF5N150UFTU

SGF5N150UFTU

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1500 V
Maximum Continuous Collector Current:10 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRG4PC40UD

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 20A
  • Vce(ON)@25℃(typ): 1.72V

IRGP4072D

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 300V
  • Ic@100℃: 40A
  • Vce(ON)@25℃(typ): 1.46V

FGA90N33ATDTU

FGA90N33ATDTU

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:330 V
Maximum Continuous Collector Current:90 A
Maximum Gate Emitter Voltage:±30 V
Mounting:Through Hole
Rad Hard:No

IRG4PF50W

电气特性 Features

  • WARP 30-150kHz IGBT模块
  • Vces: 900V
  • Ic@100℃: 28A
  • Vce(ON)@25℃(typ): 2.25V

IRG4BC30F

电气特性 Features

  • 高速(1-8kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 17A
  • Vce(ON)@25℃(typ): 1.59V

IRGSL14C40L

电气特性 Features

  • DC-1kHz(标准)IGBT模块
  • Vces: 430V
  • Ic@100℃: 14A
  • Vce(ON)@25℃(typ): 1.55V

SKB04N60E3045A

SKB04N60E3045A

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:9.4 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No

IRGPS40B120U

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 1200V
  • Ic@100℃: 40A
  • Vce(ON)@25℃(typ): 3.12V

NGTB30N120IHRWG

NGTB30N120IHRWG

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:60 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Operating Temperature:-40 to 175 ℃
Rad Hard:No