首页 > 产品展示 > 场效应管(MosFET) > N沟道场效应管 MMBFJ309LT1G MMBFJ309LT1G 更新于 2025-07-27 电气特性 FeaturesConfiguration:SingleChannel Type:NMaximum Drain Source Voltage:25 VMaximum Gate Source Voltage:25 VOperating Temperature:-55 to 150 ℃Mounting:Surface MountRad Hard:No