更新于 2025-06-10
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 50 V |
| Maximum Continuous Drain Current: | 100 mA |
| Maximum Gate Source Voltage: | ±20 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
5HN01C-TB-E
相关文章
- N沟道功率MOS管,Vbrdss: 55V,Vgs: 20V,RDS(on) Max@10V: 13.0mΩ,Id: 71A
- N沟道功率MOS管,Vbrdss: 100V,Vgs: 16V,RDS(on) Max@10V: 105mΩ,Id: 9.5A
- N沟道功率MOS管,Vbrdss: 100V,Vgs: 20V,RDS(on) Max@10V: 13.5mΩ,Id: 58A
- N沟道功率MOS管,Vbrdss: 250V,Vgs: 30V,RDS(on) Max@10V: 46.0mΩ,Id: 44A
- N沟道功率MOS管,Vbrdss: 200V,Vgs: 20V,RDS(on) Max@10V: 78.0mΩ,Id: 24A