更新于 2025-11-06电气特性 Features
- 集成肖特基二极管的N沟道功率MOS管
- Vbrdss: 25V
- Vgs: 16V
- RDS(on) Max@10V: 1.1mΩ
- Id: 213A
相关文章
- N沟道功率MOS管,Vbrdss: 100V,Vgs: 20V,RDS(on) Max@10V: 4.7mΩ,Id: 180A
- N沟道功率MOS管,Vbrdss: 60V,Vgs: 20V,RDS(on) Max@10V: 5.9mΩ,Id: 95A
- N沟道功率MOS管,Vbrdss: 100V,Vgs: 20V,RDS(on) Max@10V: 3.5mΩ,Id: 124A
- N沟道功率MOS管,Vbrdss: 30V,Vgs: 20V,RDS(on) Max@10V: 3.3mΩ
电气特性 Features
| Configuration: | Single Dual Source |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 5 V |
| Maximum Continuous Drain Current: | 100 mA |
| Maximum Gate Source Voltage: | 1 V |
| Maximum Drain Gate Voltage: | -5 to 1 V |
| Operating Temperature: | -65 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |