更新于 2026-03-08电气特性 Features
- N沟道功率MOS管
- Vbrdss: 30V
- Vgs: 20V
- RDS(on) Max@10V: 8.7mΩ
- Id: 62A
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- N沟道功率MOS管,Vbrdss: 100V,Vgs: 20V,RDS(on) Max@10V: 44.0mΩ,Id: 33A
- N沟道功率MOS管,Vbrdss: 30V,Vgs: 20V,RDS(on) Max@10V: 4.9mΩ,Id: 83A
- N沟道功率MOS管,Vbrdss: 30V,Vgs: 20V,RDS(on) Max@10V: 1.5mΩ,Id: 192A
- N沟道功率MOS管,Vbrdss: 55V,Vgs: 20V,RDS(on) Max@10V: 6.5mΩ,Id: 110A
电气特性 Features
| Configuration: | Dual |
| Channel Type: | N |
| Maximum Drain Gate Voltage: | -50 V |
| Operating Temperature: | -55 to 125 ℃ |
| Mounting: | Through Hole |
| Rad Hard: | No |