更新于 2026-03-06电气特性 Features
- N沟道功率MOS管
- Vbrdss: 200V
- Vgs: 20V
- RDS(on) Max@10V: 20.0mΩ
- Id: 76A
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- N沟道功率MOS管,Vbrdss: 25V,Vgs: 16V,RDS(on) Max@10V: 1.7mΩ,Id: 125A
- N沟道功率MOS管,Vbrdss: 60V,Vgs: 20V,RDS(on) Max@10V: 9.4mΩ
- N沟道功率MOS管,Vbrdss: 150V,Vgs: 20V,RDS(on) Max@10V: 43.0mΩ
电气特性 Features
| Configuration: | Dual |
| Channel Type: | N |
| Maximum Drain Gate Voltage: | -50 V |
| Operating Temperature: | -55 to 125 ℃ |
| Mounting: | Through Hole |
| Rad Hard: | No |