更新于 2025-06-11电气特性 Features
- N沟道功率MOS管
- Vbrdss: 200V
- Vgs: 30V
- RDS(on) Max@10V: 380.0mΩ
- Id: 9.4A
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- N沟道功率MOS管,Vbrdss: 30V,Vgs: 20V,RDS(on) Max@10V: 4.0mΩ
- N沟道功率MOS管,Vbrdss: 30V,Vgs: 20V,RDS(on) Max@10V: 2.2mΩ
- N沟道功率MOS管,Vbrdss: 55V,Vgs: 16V,RDS(on) Max@10V: 27.0mΩ,Id: 36A
电气特性 Features
电气特性 Features
电气特性 Features
| Configuration: | Single Dual Gate |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 15 V |
| Maximum Continuous Drain Current: | 30 mA |
| Maximum Gate Source Voltage: | 8 V |
| Operating Temperature: | -55 to 125 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |