IRFI4227
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 200V
- Vgs: 30V
- RDS(on) Max@10V: 22.0mΩ
- Id: 26A
更新于 2025-09-18IRFY130
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 100V
- Vgs: 20V
- RDS(on) Max@10V: 180.0mΩ
- Id: 9.1A
IRL530NS
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 100V
- Vgs: 20V
- RDS(on) Max@10V: 100.0mΩ
- Id: 17A
IRFP4468
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 100V
- Vgs: 20V
- RDS(on) Max@10V: 2.6mΩ
- Id: 290A
IRF6609
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 20V
- Vgs: 20V
- RDS(on) Max@10V: 2.0mΩ
IJW120R070T1FKSA1
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 1200 V |
| Maximum Continuous Drain Current: | 0.035 mA |
| Maximum Gate Source Voltage: | 2 V |
| Operating Temperature: | -55 to 175 ℃ |
| Mounting: | Through Hole |
| Rad Hard: | No |
IRFL4105
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 55V
- Vgs: 20V
- RDS(on) Max@10V: 45.0mΩ
IRF540ZL
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 100V
- Vgs: 20V
- RDS(on) Max@10V: 26.5mΩ
- Id: 36A
IRFP4110
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 100V
- Vgs: 20V
- RDS(on) Max@10V: 4.5mΩ
- Id: 180A
IRF2805S
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 55V
- Vgs: 20V
- RDS(on) Max@10V: 4.7mΩ
- Id: 135A
IRFB4510
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 100V
- Vgs: 20V
- RDS(on) Max@10V: 13.5mΩ
- Id: 62A
IRFH5250
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 25V
- Vgs: 20V
- RDS(on) Max@10V: 1.15mΩ
IRFR825
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 500V
- Vgs: 20V
- RDS(on) Max@10V: 1300.0mΩ
- Id: 6.0A
CPH5902H-TL-E
电气特性 Features
- 场效应晶体管
- NPN Epitaxial Silicon Transistor and N-Channel Silicon Junction Field Effect Transistor