IRF1010N

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 55V
  • Vgs: 20V
  • RDS(on) Max@10V: 11.0mΩ
  • Id: 72A

IRL3705ZS

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 55V
  • Vgs: 16V
  • RDS(on) Max@10V: 8.0mΩ
  • Id: 86A

IRFB38N20D

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 200V
  • Vgs: 30V
  • RDS(on) Max@10V: 54.0mΩ
  • Id: 44A

IRLHM620

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 20V
  • Vgs: 12V
  • Id: 40A

IRL2910

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 100V
  • Vgs: 16V
  • RDS(on) Max@10V: 26.0mΩ
  • Id: 48A

IRFS4620

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 200V
  • Vgs: 20V
  • RDS(on) Max@10V: 78.0mΩ
  • Id: 24A

IRFB3806

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 60V
  • Vgs: 20V
  • RDS(on) Max@10V: 15.8mΩ
  • Id: 43A

IRFB3307Z

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 75V
  • Vgs: 20V
  • RDS(on) Max@10V: 5.8mΩ
  • Id: 128A

IRFP4710

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 100V
  • Vgs: 20V
  • RDS(on) Max@10V: 14.0mΩ
  • Id: 72A

IRFR4620

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 200V
  • Vgs: 20V
  • RDS(on) Max@10V: 78.0mΩ
  • Id: 24A

2SK2394-7-TB-E

2SK2394-7-TB-E

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Drain Source Voltage:15 V
Maximum Continuous Drain Current:50 mA
Maximum Drain Gate Voltage:-15 V
Operating Temperature:-55 to 150 ℃
Mounting:Surface Mount
Rad Hard:No

PMBFJ310,215

PMBFJ310,215

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Drain Source Voltage:25 V
Maximum Gate Source Voltage:-25 V
Maximum Drain Gate Voltage:-25 V
Operating Temperature:-65 to 150 ℃
Mounting:Surface Mount
Rad Hard:No

2SK715U-AC

2SK715U-AC

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Drain Source Voltage:15 V
Maximum Continuous Drain Current:50 mA
Maximum Drain Gate Voltage:-15 V
Operating Temperature:-55 to 125 ℃
Mounting:Through Hole
Rad Hard:No

IRLR8743

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 30V
  • Vgs: 20V
  • RDS(on) Max@10V: 3.1mΩ
  • Id: 160A

IRF7478PBF-1

IRF7478PBF-1

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 60V
  • Vgs: 20V
  • RDS(on) Max@10V: 26.0mΩ