SMP1320-011LF

SMP1320-011LF

电气特性 Features

Configuration:Single
Maximum Reverse Voltage:50 V
Maximum Forward Voltage:0.85(Typ)@10mA V
Frequency Range:HF|VHF|UHF
Maximum Diode Capacitance:0.3@30V pF
Maximum Power Dissipation:250 mW
Typical Carrier Life Time:0.4 us
Mounting:Surface Mount
Type:Switch
Rad Hard:No

BAP64-04,215

BAP64-04,215

电气特性 Features

Configuration:Dual Series
Maximum Reverse Voltage:175 V
Maximum Forward Current:100 mA
Maximum Forward Voltage:1.1@50mA V
Frequency Range:SHF
Maximum Diode Capacitance:0.35@20V pF
Maximum Power Dissipation:250 mW
Typical Carrier Life Time:1.55 us
Mounting:Surface Mount
Type:Attenuator|Switch
Rad Hard:No

HSMP-389L-TR2G

HSMP-389L-TR2G

电气特性 Features

Configuration:Triple Parallel
Maximum Reverse Voltage:100 V
Maximum Diode Capacitance:0.3@5V pF
Typical Carrier Life Time:0.2 us
Mounting:Surface Mount
Type:Switch
Rad Hard:No

HSMP-3832-TR1G

HSMP-3832-TR1G

电气特性 Features

Configuration:Dual Series
Maximum Reverse Voltage:200 V
Maximum Diode Capacitance:0.3@50V pF
Maximum Power Dissipation:250 mW
Typical Carrier Life Time:0.5 us
Mounting:Surface Mount
Type:Attenuator|Switch
Rad Hard:No

BAR81WH6327XTSA1

BAR81WH6327XTSA1

电气特性 Features

Configuration:Single Dual Anode Dual Cathode
Maximum Reverse Voltage:30 V
Maximum Forward Current:100 mA
Maximum Forward Voltage:1 V
Maximum Diode Capacitance:0.9@3V pF
Maximum Power Dissipation:100 mW
Typical Carrier Life Time:0.08 us
Mounting:Surface Mount
Type:Switch
Rad Hard:No

BAP65-03,115

BAP65-03,115

电气特性 Features

Configuration:Single
Maximum Reverse Voltage:30 V
Maximum Forward Current:100 mA
Maximum Forward Voltage:1.1@50mA V
Maximum Diode Capacitance:0.8@3V pF
Maximum Power Dissipation:500 mW
Typical Carrier Life Time:0.17 us
Mounting:Surface Mount
Type:Attenuator|Switch
Rad Hard:No

BAR6405E6327HTSA1

BAR6405E6327HTSA1

电气特性 Features

Configuration:Dual Common Cathode
Maximum Reverse Voltage:150 V
Maximum Forward Current:100 mA
Maximum Forward Voltage:1.1@50mA V
Frequency Range:MF|HF|VHF|UHF|SHF
Maximum Diode Capacitance:0.35@20V pF
Maximum Power Dissipation:250 mW
Typical Carrier Life Time:1.55 us
Mounting:Surface Mount
Type:Attenuator|Switch
Rad Hard:No

BAR14-1 E6327

BAR14-1 E6327

电气特性 Features

Configuration:Dual Series
Maximum Reverse Voltage:100 V
Maximum Forward Current:140 mA
Maximum Forward Voltage:1.25@100mA V
Frequency Range:HF
Maximum Diode Capacitance:0.5@50V pF
Maximum Power Dissipation:250 mW
Typical Carrier Life Time:1 us
Mounting:Surface Mount
Type:Attenuator|Switch

HSMP-3834-BLKG

HSMP-3834-BLKG

电气特性 Features

Configuration:Dual Common Cathode
Maximum Reverse Voltage:200 V
Maximum Diode Capacitance:0.3@50V pF
Maximum Power Dissipation:250 mW
Typical Carrier Life Time:0.5 us
Mounting:Surface Mount
Type:Attenuator|Switch
Rad Hard:No

HSMP-386B-TR2G

HSMP-386B-TR2G

电气特性 Features

Configuration:Single
Maximum Reverse Voltage:50 V
Maximum Diode Capacitance:0.2(Typ)@50V pF
Typical Carrier Life Time:0.5 us
Mounting:Surface Mount
Type:Attenuator|Switch
Rad Hard:No

HPND-4005

电气特性 Features

Configuration:Single
Maximum Reverse Voltage:100 V
Maximum Forward Voltage:1@20mA V
Maximum Diode Capacitance:0.02@10V pF
Maximum Power Dissipation:250 mW
Typical Carrier Life Time:0.1 us
Mounting:Surface Mount
Type:Attenuator|Switch
Rad Hard:No

HSMP-489B-TR1G

HSMP-489B-TR1G

电气特性 Features

Configuration:Single Dual Anode
Maximum Reverse Voltage:100 V
Frequency Range:UHF|SHF
Maximum Diode Capacitance:0.375@5V pF
Mounting:Surface Mount
Type:Switch
Rad Hard:No

1SV233-TB-E

1SV233-TB-E

电气特性 Features

Configuration:Single
Maximum Reverse Voltage:50 V
Maximum Forward Current:50 mA
Maximum Forward Voltage:0.95(Typ) V
Frequency Range:VHF|UHF
Maximum Diode Capacitance:0.23(Typ)@50V pF
Maximum Power Dissipation:150 mW
Mounting:Surface Mount
Rad Hard:No

HSMP-389E-TR1G

HSMP-389E-TR1G

电气特性 Features

Configuration:Dual Common Anode
Maximum Reverse Voltage:100 V
Maximum Diode Capacitance:0.3@5V pF
Typical Carrier Life Time:0.2 us
Mounting:Surface Mount
Type:Switch
Rad Hard:No

BAP64-06

BAP64-06

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    BAP64-06内部电路图

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