达林顿管

MMBTA64

MMBTA64

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    MMBTA64内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2026-06-05 Tag标签:达林顿管

TD62064APG(O,J,S)

TD62064APG(O,J,S)

电气特性 Features

Configuration:Quad
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:1.5 A
Minimum DC Current Gain:800(Typ)@1A@2V|1500(Typ)@0.25A@2V
Maximum Collector Emitter Saturation Voltage:1.6@2mA@1.25A|1.25@935uA@0.75A V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-06-05 Tag标签:达林顿管

TIP127

TIP127

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:100 V
Peak DC Collector Current:5 A
Minimum DC Current Gain:1000@0.5A@3V|1000@3A@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A|4@20mA@5A V
Maximum Collector Base Voltage:100 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-06-05 Tag标签:达林顿管

BST52

电气特性 Features

  • 类型: 开关二极管
  • Pd = 350mW
  • Io = 150mA
  • Vr = 75V
  • Vf = 1.25V
  • Ir = 1uA
  • Trr = 4ns
  • 内部电路图:
    BST52内部电路图

更多相似达林顿晶体管产品参数说明表

达林顿管 更新于 2026-06-05 Tag标签:达林顿管

TIP115G

TIP115G

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:2 A
Minimum DC Current Gain:1000@1A@4V|500@2A@4V
Maximum Collector Emitter Saturation Voltage:2.5@8mA@2A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-06-05 Tag标签:达林顿管

MPSA13ZL1G

MPSA13ZL1G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:5000@10mA@5V|10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@0.1mA@100mA V
Maximum Collector Base Voltage:30 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-06-05 Tag标签:达林顿管

BDW53D-S

BDW53D-S

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:120 V
Peak DC Collector Current:4 A
Minimum DC Current Gain:750@1.5A@3V|100@4A@3V
Maximum Collector Emitter Saturation Voltage:2.5@30mA@1.5A|4@40mA@4A V
Maximum Collector Base Voltage:120 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-06-05 Tag标签:达林顿管

TD62783AFG(O,S)

电气特性 Features

Configuration:Octal
Type:NPN|PNP
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:2@350mA|1.9@225mA|1.8@100mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-06-05 Tag标签:达林顿管

MMBTA14-7-F

MMBTA14-7-F

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:30 V
Peak DC Collector Current:0.3 A
Minimum DC Current Gain:10000@10mA@5V|20000@100mA@5V
Maximum Collector Emitter Saturation Voltage:1.5@100uA@100mA V
Maximum Collector Base Voltage:30 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-06-05 Tag标签:达林顿管

TIP125

TIP125

电气特性 Features

Configuration:Single
Type:PNP
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:5 A
Minimum DC Current Gain:1000@3A@3V|1000@500mA@3V
Maximum Collector Emitter Saturation Voltage:2@12mA@3A|4@20mA@5A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-06-05 Tag标签:达林顿管

BST51,115

BST51,115

电气特性 Features

Configuration:Single Dual Collector
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:1000@150mA@10V|2000@500mA@10V
Maximum Collector Emitter Saturation Voltage:1.3@0.5mA@500mA V
Maximum Collector Base Voltage:80 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-06-05 Tag标签:达林顿管

MJ11032G

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:120 V
Peak DC Collector Current:50 A
Minimum DC Current Gain:400@50A@5V|1000@25A@5V
Maximum Collector Emitter Saturation Voltage:2.5@250mA@25A|3.5@500mA@50A V
Maximum Collector Base Voltage:120 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-06-05 Tag标签:达林顿管

MPSW45ARLRAG

MPSW45ARLRAG

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:1 A
Minimum DC Current Gain:25000@200mA@5V|15000@500mA@5V|4000@1A@5V
Maximum Collector Emitter Saturation Voltage:1.5@2mA@1A V
Maximum Collector Base Voltage:60 V
Mounting:Through Hole
Rad Hard:No
达林顿管 更新于 2026-06-05 Tag标签:达林顿管

ULQ2004ADR

ULQ2004ADR

电气特性 Features

Configuration:Array 7
Type:NPN
Maximum Collector Emitter Voltage:50 V
Peak DC Collector Current:0.5 A
Maximum Collector Emitter Saturation Voltage:1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-06-05 Tag标签:达林顿管

BCV47E6327HTSA1

BCV47E6327HTSA1

电气特性 Features

Configuration:Single
Type:NPN
Maximum Collector Emitter Voltage:60 V
Peak DC Collector Current:0.5 A
Minimum DC Current Gain:2000@0.5A@5V|10000@100mA@5V|4000@10mA@5V|2000@0.1mA@1V
Maximum Collector Emitter Saturation Voltage:1@0.1mA@100mA V
Maximum Collector Base Voltage:80 V
Mounting:Surface Mount
Rad Hard:No
达林顿管 更新于 2026-06-05 Tag标签:达林顿管