首页 > 产品展示 > 场效应管(MosFET) > IGBT管-IGBT模块 IHW30N90T IHW30N90T 更新于 2026-07-22 电气特性 FeaturesConfiguration:SingleChannel Type:NMaximum Collector Emitter Voltage:900 VMaximum Continuous Collector Current:30 AMaximum Gate Emitter Voltage:±20 VMounting:Through HoleRad Hard:No