更新于 2025-06-10电气特性 Features
- IGBT模块(8-30kHz)
- Vces: 600V
- Ic@100℃: 90A
- Vce(ON)@25℃(typ): 1.7V
相关文章
- 超高速(8-30kHz)IGBT模块,Vces: 650V,Ic@100℃: 40A,Vce(ON)@25℃(typ): 1.7V
- 低导通压降(Vceon)IGBT模块,Vces: 1200V,Ic@100℃: 50A,Vce(ON)@25℃(typ): 1.70V
- WARP 30-150kHz IGBT模块,Vces: 600V,Ic@100℃: 45A,Vce(ON)@25℃(typ): 2.00V
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 9.4 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 40 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |