IRGP6660D

电气特性 Features

  • IGBT模块(8-30kHz)
  • Vces: 600V
  • Ic@100℃: 60A
  • Vce(ON)@25℃(typ): 1.65V

FGA50N100BNTDTU

FGA50N100BNTDTU

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1000 V
Maximum Continuous Collector Current:50 A
Maximum Gate Emitter Voltage:±25 V
Mounting:Through Hole
Rad Hard:No

SKP04N60

SKP04N60

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:9.4 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole

IRGB4056D

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 12A
  • Vce(ON)@25℃(typ): 1.55V

SGF5N150UFTU

SGF5N150UFTU

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1500 V
Maximum Continuous Collector Current:10 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRG7PSH54K10D

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 1200V
  • Ic@100℃: 65A
  • Vce(ON)@25℃(typ): 1.90V

FGA25S125P_SN00337

FGA25S125P_SN00337

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1250 V
Maximum Continuous Collector Current:50 A
Maximum Gate Emitter Voltage:±25 V
Mounting:Through Hole
Operating Temperature:-55 to 175 ℃
Rad Hard:No

IRGP4063

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 48A
  • Vce(ON)@25℃(typ): 1.65V

IRGC50B120UB

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 1200V
  • Vce(ON)@25℃(typ): 3.15V

FGPF50N33BTTU

FGPF50N33BTTU

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:330 V
Maximum Continuous Collector Current:50 A
Maximum Gate Emitter Voltage:±30 V
Mounting:Through Hole
Rad Hard:No

IKW15N120T2

IKW15N120T2

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:30 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IRGP4062-E

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 24A
  • Vce(ON)@25℃(typ): 1.60V

FGP3040G2_F085

FGP3040G2_F085

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:430 V
Maximum Continuous Collector Current:41 A
Maximum Gate Emitter Voltage:±10 V
Mounting:Through Hole
Operating Temperature:-55 to 175 ℃
Rad Hard:No

STGB18N40LZT4

STGB18N40LZT4

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:360 V
Maximum Continuous Collector Current:30 A
Maximum Gate Emitter Voltage:12 V
Mounting:Surface Mount
Rad Hard:No

IRG4PC50UD

电气特性 Features

  • 超高速(8-30kHz)IGBT模块
  • Vces: 600V
  • Ic@100℃: 27A
  • Vce(ON)@25℃(typ): 1.65V