更新于 2025-09-16电气特性 Features
- N沟道功率MOS管
- Vbrdss: 20V
- Vgs: 20V
- RDS(on) Max@10V: 2.2mΩ
相关文章
- N沟道功率MOS管,Vbrdss: 30V,Vgs: 16V,RDS(on) Max@10V: 45mΩ,Id: 14A
- N沟道功率MOS管,Vbrdss: 80V,Vgs: 20V,RDS(on) Max@10V: 29.0mΩ
- N沟道功率MOS管,Vbrdss: 150V,Vgs: 20V,RDS(on) Max@10V: 12.1mΩ,Id: 99A
- N沟道功率MOS管,Vbrdss: 40V,Vgs: 20V,RDS(on) Max@10V: 1.25mΩ,Id: 400A
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Gate Source Voltage: | -25 V |
| Maximum Drain Gate Voltage: | 25 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |