更新于 2025-06-12电气特性 Features
- N沟道功率MOS管
- Vbrdss: 100V
- Vgs: 20V
- RDS(on) Max@10V: 110.0mΩ
- Id: 11A
相关文章
- N沟道功率MOS管,Vbrdss: 60V,Vgs: 20V,RDS(on) Max@10V: 3.4mΩ,Id: 206A
- N沟道功率MOS管,Vbrdss: 55V,Vgs: 20V,RDS(on) Max@10V: 11.0mΩ,Id: 84A
- N沟道功率MOS管,Vbrdss: 150V,Vgs: 20V,RDS(on) Max@10V: 70.0mΩ,Id: 21A
- N沟道功率MOS管,Vbrdss: 200V,Vgs: 30V,RDS(on) Max@10V: 9.7mΩ,Id: 130A
电气特性 Features
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 1200 V |
| Maximum Continuous Drain Current: | 0.035 mA |
| Maximum Gate Source Voltage: | 2 V |
| Operating Temperature: | -55 to 175 ℃ |
| Mounting: | Through Hole |
| Rad Hard: | No |