IRFH5301
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 30V
- Vgs: 20V
- RDS(on) Max@10V: 1.85mΩ
- Id: 100A
IRLML2402TRPBF-1
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 20V
- Vgs: 12V
IRLHM620
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 20V
- Vgs: 12V
- Id: 40A
IRFS3207Z
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 75V
- Vgs: 20V
- RDS(on) Max@10V: 4.1mΩ
- Id: 170A
IRFB4332
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 250V
- Vgs: 30V
- RDS(on) Max@10V: 33.0mΩ
- Id: 60A
IRFH5406
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 60V
- Vgs: 20V
- RDS(on) Max@10V: 14.4mΩ
- Id: 40A
IRFP4137
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 300V
- Vgs: 20V
- RDS(on) Max@10V: 69.0mΩ
- Id: 38A
IRFR3410
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 100V
- Vgs: 20V
- RDS(on) Max@10V: 39.0mΩ
- Id: 31A
MMBFJ309

电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 25 V |
| Maximum Gate Source Voltage: | -25 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
MMBFJ201

电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Gate Source Voltage: | -40 V |
| Maximum Drain Gate Voltage: | 40 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
IRLR3802
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 12V
- Vgs: 12V
- Id: 84A
IRFH7107
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 75V
- Vgs: 20V
- RDS(on) Max@10V: 8.5mΩ
- Id: 75A
IRL1404ZS
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 40V
- Vgs: 16V
- RDS(on) Max@10V: 3.1mΩ
- Id: 200A
CPH5902H-TL-E
电气特性 Features
- 场效应晶体管
- NPN Epitaxial Silicon Transistor and N-Channel Silicon Junction Field Effect Transistor
IRF3315
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 150V
- Vgs: 20V
- RDS(on) Max@10V: 70.0mΩ
- Id: 21A

更新于 2026-03-10