ATF-54143-BLKG
电气特性 Features
| Configuration: | Single Dual Source |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 5 V |
| Maximum Continuous Drain Current: | 120 mA |
| Maximum Gate Source Voltage: | 1 V |
| Maximum Drain Gate Voltage: | -5 to 1 V |
| Operating Temperature: | -65 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
更新于 2025-09-19IRF6798M
电气特性 Features
- 集成肖特基二极管的N沟道功率MOS管
- Vbrdss: 25V
- Vgs: 20V
- RDS(on) Max@10V: 1.3mΩ
- Id: 197A
2SK596S-C
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Continuous Drain Current: | 1 mA |
| Maximum Drain Gate Voltage: | -20 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Through Hole |
| Rad Hard: | No |
IRLL014N
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 55V
- Vgs: 16V
- RDS(on) Max@10V: 140.0mΩ
- Id: 2.0A
IRFH5304
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 30V
- Vgs: 20V
- RDS(on) Max@10V: 4.5mΩ
IRFHM3911
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 100V
- Vgs: 20V
- RDS(on) Max@10V: 115.0mΩ
- Id: 11A
IRLB8314
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 30V
- Vgs: 20V
- RDS(on) Max@10V: 2.4mΩ
- Id: 171A
IRFU4105Z
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 55V
- Vgs: 20V
- RDS(on) Max@10V: 24.5mΩ
- Id: 21A
IRF640N
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 200V
- Vgs: 20V
- RDS(on) Max@10V: 150.0mΩ
- Id: 18A
2N4858
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 40 V |
| Maximum Gate Source Voltage: | -40 V |
| Maximum Drain Gate Voltage: | 40 V |
| Operating Temperature: | -65 to 200 ℃ |
| Mounting: | Through Hole |
| Rad Hard: | No |
IRF6716M
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 25V
- Vgs: 20V
- RDS(on) Max@10V: 1.6mΩ
IRF6718L2
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 25V
- Vgs: 20V
- RDS(on) Max@10V: 0.70mΩ
- Id: 270A
IRFP260M
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 200V
- Vgs: 20V
- RDS(on) Max@10V: 40.0mΩ
- Id: 50A