首页 > 产品展示 > 场效应管(MosFET) > IGBT管-IGBT模块 NGTB50N120FL2WG NGTB50N120FL2WG 更新于 2025-11-07 电气特性 FeaturesConfiguration:SingleChannel Type:NMaximum Collector Emitter Voltage:1200 VMaximum Continuous Collector Current:100 AMaximum Gate Emitter Voltage:±20 VMounting:Through HoleOperating Temperature:-55 to 175 ℃Rad Hard:No