IRG4BC15UD-L
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 600V
- Ic@100℃: 7.8A
- Vce(ON)@25℃(typ): 2.02V
更新于 2026-07-23IRG4IBC30KD
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 600V
- Ic@100℃: 9.2A
- Vce(ON)@25℃(typ): 2.21V
IRGP4750D
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 650V
- Ic@100℃: 50A
- Vce(ON)@25℃(typ): 1.7V
IHW15T120
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 30 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
IRG7PSH73K10PBF
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1200 V |
| Maximum Continuous Collector Current: | 220 A |
| Maximum Gate Emitter Voltage: | ±30 V |
| Mounting: | Through Hole |
| Rad Hard: | No |
IRGC4069B
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 600V
- Vce(ON)@25℃(typ): 1.6V
NGTG30N60FWG
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 60 A |
| Maximum Gate Emitter Voltage: | ±30 V |
| Mounting: | Through Hole |
| Operating Temperature: | -55 to 150 ℃ |
| Rad Hard: | No |
IRG4RC10UDPBF
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 8.5 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |
IRG7CH75K10EF-R
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 1200V
- Vce(ON)@25℃(typ): 1.90V
FGB20N60SFD_F085
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 40 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Surface Mount |
| Operating Temperature: | -55 to 150 ℃ |
| Rad Hard: | No |
NGTB40N135IHRWG
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 1350 V |
| Maximum Continuous Collector Current: | 80 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
| Operating Temperature: | -40 to 175 ℃ |
| Rad Hard: | No |
IKP20N60T
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Collector Emitter Voltage: | 600 V |
| Maximum Continuous Collector Current: | 40 A |
| Maximum Gate Emitter Voltage: | ±20 V |
| Mounting: | Through Hole |
IRG4CC30UB
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 600V
- Vce(ON)@25℃(typ): 1.95V
IRG7CH73UEF-R
电气特性 Features
- 超高速(8-30kHz)IGBT模块
- Vces: 1200V
- Ic@100℃: 75A
- Vce(ON)@25℃(typ): 1.60V
IRG4PF50WD
电气特性 Features
- WARP 30-150kHz IGBT模块
- Vces: 900V
- Ic@100℃: 28A
- Vce(ON)@25℃(typ): 2.25V