IRFI530N
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 100V
- Vgs: 20V
- RDS(on) Max@10V: 110.0mΩ
- Id: 11A
更新于 2026-07-24IRF1104L
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 40V
- Vgs: 20V
- RDS(on) Max@10V: 9.0mΩ
- Id: 100A
IRFB38N20D
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 200V
- Vgs: 30V
- RDS(on) Max@10V: 54.0mΩ
- Id: 44A
IRFS7730
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 75V
- Vgs: 20V
- RDS(on) Max@10V: 2.6mΩ
- Id: 246A
IRFH5053
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 100V
- Vgs: 20V
- RDS(on) Max@10V: 18.0mΩ
- Id: 46A
CPH5902H-TL-E
电气特性 Features
- 场效应晶体管
- NPN Epitaxial Silicon Transistor and N-Channel Silicon Junction Field Effect Transistor
IRFSL7730
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 75V
- Vgs: 20V
- RDS(on) Max@10V: 2.6mΩ
- Id: 246A
IRFZ46NS
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 55V
- Vgs: 20V
- RDS(on) Max@10V: 16.5mΩ
- Id: 53A
IRLML2060
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 60V
- Vgs: 16V
- RDS(on) Max@10V: 480.0mΩ
MMBFJ111
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Gate Source Voltage: | -35 V |
| Maximum Drain Gate Voltage: | 35 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
PMBFJ113,215
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 40 V |
| Maximum Gate Source Voltage: | -40 V |
| Maximum Drain Gate Voltage: | -40 V |
| Operating Temperature: | -65 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
IRF6798M
电气特性 Features
- 集成肖特基二极管的N沟道功率MOS管
- Vbrdss: 25V
- Vgs: 20V
- RDS(on) Max@10V: 1.3mΩ
- Id: 197A
IRF3709S
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 30V
- Vgs: 20V
- RDS(on) Max@10V: 9.0mΩ
- Id: 90A
IRF6668
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 80V
- Vgs: 20V
- RDS(on) Max@10V: 15.0mΩ
- Id: 55A
IRFP150N
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 100V
- Vgs: 20V
- RDS(on) Max@10V: 36.0mΩ
- Id: 39A