MMBFJ112

电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Gate Source Voltage: | -35 V |
| Maximum Drain Gate Voltage: | 35 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
IRFP4137
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 300V
- Vgs: 20V
- RDS(on) Max@10V: 69.0mΩ
- Id: 38A
IRFH7932
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 30V
- Vgs: 20V
- RDS(on) Max@10V: 3.3mΩ
- Id: 104A
IRFI540N
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 100V
- Vgs: 20V
- RDS(on) Max@10V: 52.0mΩ
- Id: 18A
IRFS3207Z
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 75V
- Vgs: 20V
- RDS(on) Max@10V: 4.1mΩ
- Id: 170A
IRFH5250
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 25V
- Vgs: 20V
- RDS(on) Max@10V: 1.15mΩ
IRFHM4231
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 25V
- Vgs: 20V
- RDS(on) Max@10V: 3.4mΩ
- Id: 72A
IRFP4004
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 40V
- Vgs: 20V
- RDS(on) Max@10V: 1.7mΩ
- Id: 350A
ATF-54143-BLKG

电气特性 Features
| Configuration: | Single Dual Source |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 5 V |
| Maximum Continuous Drain Current: | 120 mA |
| Maximum Gate Source Voltage: | 1 V |
| Maximum Drain Gate Voltage: | -5 to 1 V |
| Operating Temperature: | -65 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
IRF630N
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 200V
- Vgs: 20V
- RDS(on) Max@10V: 300.0mΩ
- Id: 9.5A
IRF1404ZS
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 40V
- Vgs: 20V
- RDS(on) Max@10V: 3.7mΩ
- Id: 190A
IRFR3707Z
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 30V
- Vgs: 20V
- RDS(on) Max@10V: 9.5mΩ
- Id: 56A
IRFHM4234
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 25V
- Vgs: 20V
- RDS(on) Max@10V: 4.4mΩ
- Id: 63A

更新于 2026-07-25