2SK3666-3-TB-E
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 30 V |
| Maximum Continuous Drain Current: | 10 mA |
| Maximum Gate Source Voltage: | -30 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
更新于 2026-07-24IRFS3806
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 60V
- Vgs: 20V
- RDS(on) Max@10V: 15.8mΩ
- Id: 43A
IRLR8259
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 25V
- Vgs: 20V
- RDS(on) Max@10V: 8.7mΩ
- Id: 57A
IRF8306M
电气特性 Features
- 集成肖特基二极管的N沟道功率MOS管
- Vbrdss: 30V
- Vgs: 20V
- RDS(on) Max@10V: 2.5mΩ
- Id: 140A
IRLR3410
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 100V
- Vgs: 16V
- RDS(on) Max@10V: 105.0mΩ
- Id: 15A
IRFU1205
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 55V
- Vgs: 20V
- RDS(on) Max@10V: 27mΩ
- Id: 23A
IRFL4105
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 55V
- Vgs: 20V
- RDS(on) Max@10V: 45.0mΩ
IRFU7546
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 60V
- Vgs: 20V
- RDS(on) Max@10V: 7.9mΩ
- Id: 71A
IRF1503
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 30V
- Vgs: 20V
- RDS(on) Max@10V: 3.3mΩ
- Id: 240A
IRF3205S
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 55V
- Vgs: 20V
- RDS(on) Max@10V: 8.0mΩ
- Id: 110A
MMBFJ112
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Gate Source Voltage: | -35 V |
| Maximum Drain Gate Voltage: | 35 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
2SK3666-2-TB-E
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 30 V |
| Maximum Continuous Drain Current: | 10 mA |
| Maximum Gate Source Voltage: | -30 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
IRF6635
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 30V
- Vgs: 20V
- RDS(on) Max@10V: 1.8mΩ
IRFY140
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 100V
- Vgs: 20V
- RDS(on) Max@10V: 77.0mΩ
- Id: 16A
IRFB61N15D
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 150V
- Vgs: 30V
- RDS(on) Max@10V: 32.0mΩ
- Id: 60A