N沟道场效应管

IRF7820

IRF7820

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 200V
  • Vgs: 20V
  • RDS(on) Max@10V: 78.0mΩ
N沟道场效应管 更新于 2025-12-26 Tag标签:N沟道场效应管

IRF6775M

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 150V
  • Vgs: 20V
  • RDS(on) Max@10V: 56.0mΩ
  • Id: 28A
N沟道场效应管 更新于 2025-12-26 Tag标签:N沟道场效应管

ATF-34143-TR2G

ATF-34143-TR2G

电气特性 Features

Configuration:Single Dual Source
Channel Type:N
Maximum Drain Source Voltage:5.5 V
Maximum Continuous Drain Current:145 mA
Maximum Gate Source Voltage:-5 V
Maximum Drain Gate Voltage:-5 V
Operating Temperature:-65 to 160 ℃
Mounting:Surface Mount
Rad Hard:No
N沟道场效应管 更新于 2025-12-26 Tag标签:N沟道场效应管

IRFSL7762

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 75V
  • Vgs: 20V
  • RDS(on) Max@10V: 6.7mΩ
  • Id: 85A
N沟道场效应管 更新于 2025-12-26 Tag标签:N沟道场效应管

ATF-38143-TR2G

ATF-38143-TR2G

电气特性 Features

Configuration:Single Dual Source
Channel Type:N
Maximum Drain Source Voltage:4.5 V
Maximum Continuous Drain Current:145 mA
Maximum Gate Source Voltage:-4 V
Maximum Drain Gate Voltage:-4 V
Operating Temperature:-65 to 160 ℃
Mounting:Surface Mount
Rad Hard:No
N沟道场效应管 更新于 2025-12-26 Tag标签:N沟道场效应管

IRF3808

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 75V
  • Vgs: 20V
  • RDS(on) Max@10V: 7.0mΩ
  • Id: 140A
N沟道场效应管 更新于 2025-12-26 Tag标签:N沟道场效应管

2SK932-22-TB-E

2SK932-22-TB-E

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Drain Source Voltage:15 V
Maximum Continuous Drain Current:50 mA
Maximum Drain Gate Voltage:-15 V
Operating Temperature:-55 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
N沟道场效应管 更新于 2025-12-26 Tag标签:N沟道场效应管

IRLS3034-7P

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 40V
  • Vgs: 20V
  • RDS(on) Max@10V: 1.4mΩ
  • Id: 380A
N沟道场效应管 更新于 2025-12-26 Tag标签:N沟道场效应管

MX2N4856

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Drain Source Voltage:40 V
Maximum Gate Source Voltage:-40 V
Maximum Drain Gate Voltage:40 V
Operating Temperature:-65 to 200 ℃
Mounting:Through Hole
Rad Hard:No
N沟道场效应管 更新于 2025-12-26 Tag标签:N沟道场效应管

IRFS4321

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 150V
  • Vgs: 30V
  • RDS(on) Max@10V: 15.0mΩ
  • Id: 83A
N沟道场效应管 更新于 2025-12-26 Tag标签:N沟道场效应管

MMBFJ108

MMBFJ108

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Gate Source Voltage:-25 V
Maximum Drain Gate Voltage:25 V
Operating Temperature:-55 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
N沟道场效应管 更新于 2025-12-26 Tag标签:N沟道场效应管

2N4858

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Drain Source Voltage:40 V
Maximum Gate Source Voltage:-40 V
Maximum Drain Gate Voltage:40 V
Operating Temperature:-65 to 200 ℃
Mounting:Through Hole
Rad Hard:No
N沟道场效应管 更新于 2025-12-26 Tag标签:N沟道场效应管

IRFI1310N

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 100V
  • Vgs: 20V
  • RDS(on) Max@10V: 36.0mΩ
  • Id: 22A
N沟道场效应管 更新于 2025-12-26 Tag标签:N沟道场效应管

IRLL024Z

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 55V
  • Vgs: 16V
  • RDS(on) Max@10V: 60.0mΩ
N沟道场效应管 更新于 2025-12-26 Tag标签:N沟道场效应管

IRFY140

电气特性 Features

  • N沟道功率MOS管
  • Vbrdss: 100V
  • Vgs: 20V
  • RDS(on) Max@10V: 77.0mΩ
  • Id: 16A
N沟道场效应管 更新于 2025-12-26 Tag标签:N沟道场效应管