2SK209-Y(TE85L,F)
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Continuous Drain Current: | 3 mA |
| Maximum Drain Gate Voltage: | -50 V |
| Operating Temperature: | -55 to 125 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
更新于 2026-03-12IRLB8748
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 30V
- Vgs: 20V
- RDS(on) Max@10V: 4.8mΩ
- Id: 92A
IRF3315S
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 150V
- Vgs: 20V
- RDS(on) Max@10V: 82.0mΩ
- Id: 21A
IRF6713S
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 25V
- Vgs: 20V
- RDS(on) Max@10V: 3.0mΩ
- Id: 95A
CPH5902H-TL-E
电气特性 Features
- 场效应晶体管
- NPN Epitaxial Silicon Transistor and N-Channel Silicon Junction Field Effect Transistor
IRFR024N
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 55V
- Vgs: 20V
- RDS(on) Max@10V: 75.0mΩ
- Id: 16A
IRF540NS
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 100V
- Vgs: 20V
- RDS(on) Max@10V: 44.0mΩ
- Id: 33A
IRFB7545
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 60V
- Vgs: 20V
- RDS(on) Max@10V: 5.9mΩ
- Id: 95A
IRFS7530
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 60V
- Vgs: 20V
- RDS(on) Max@10V: 2.0mΩ
- Id: 295A
BF510,215
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 20 V |
| Maximum Continuous Drain Current: | 30 mA |
| Maximum Drain Gate Voltage: | 20 V |
| Operating Temperature: | -65 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
IRFR18N15D
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 150V
- Vgs: 30V
- RDS(on) Max@10V: 125.0mΩ
- Id: 18A
IRFH5306
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 30V
- Vgs: 20V
- RDS(on) Max@10V: 8.1mΩ
- Id: 45A
IRFB42N20D
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 200V
- Vgs: 30V
- RDS(on) Max@10V: 55.0mΩ
- Id: 42.6A
IRFSL7762
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 75V
- Vgs: 20V
- RDS(on) Max@10V: 6.7mΩ
- Id: 85A