IRF1324
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 24V
- Vgs: 20V
- RDS(on) Max@10V: 1.5mΩ
- Id: 353A
更新于 2026-07-25IRFB7537
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 60V
- Vgs: 20V
- RDS(on) Max@10V: 3.3mΩ
- Id: 173A
IRLZ34N
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 55V
- Vgs: 16V
- RDS(on) Max@10V: 35.0mΩ
- Id: 27A
IRLH5034
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 40V
- Vgs: 16V
- RDS(on) Max@10V: 2.4mΩ
- Id: 100A
IRFS7430-7P
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 40V
- Vgs: 20V
- RDS(on) Max@10V: 0.75mΩ
- Id: 522A
IRFP4004
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 40V
- Vgs: 20V
- RDS(on) Max@10V: 1.7mΩ
- Id: 350A
CPH5902H-TL-E
电气特性 Features
- 场效应晶体管
- NPN Epitaxial Silicon Transistor and N-Channel Silicon Junction Field Effect Transistor
BFT46,215
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 25 V |
| Maximum Continuous Drain Current: | 10 mA |
| Maximum Gate Source Voltage: | -25 V |
| Maximum Drain Gate Voltage: | 25 V |
| Operating Temperature: | -65 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
3SK263-5-TG-E
电气特性 Features
| Configuration: | Single Dual Gate |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 15 V |
| Maximum Continuous Drain Current: | 30 mA |
| Maximum Gate Source Voltage: | 8 V |
| Operating Temperature: | -55 to 125 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
2SK3666-3-TB-E
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 30 V |
| Maximum Continuous Drain Current: | 10 mA |
| Maximum Gate Source Voltage: | -30 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
2SK715U
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 15 V |
| Maximum Continuous Drain Current: | 50 mA |
| Maximum Drain Gate Voltage: | -15 V |
| Operating Temperature: | -55 to 125 ℃ |
| Mounting: | Through Hole |
| Rad Hard: | No |
ATF-38143-TR2G
电气特性 Features
| Configuration: | Single Dual Source |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 4.5 V |
| Maximum Continuous Drain Current: | 145 mA |
| Maximum Gate Source Voltage: | -4 V |
| Maximum Drain Gate Voltage: | -4 V |
| Operating Temperature: | -65 to 160 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
IRFS4115
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 150V
- Vgs: 20V
- RDS(on) Max@10V: 12.1mΩ
- Id: 99A
IRFSL4310Z
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 100V
- Vgs: 20V
- RDS(on) Max@10V: 6.0mΩ
- Id: 127A
IRFR1010Z
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 55V
- Vgs: 20V
- RDS(on) Max@10V: 7.5mΩ
- Id: 91A