更新于 2025-06-11电气特性 Features
- P沟道功率MOS管
- Vbrdss: -100V
- Vgs: 20V
- RDS(on) Max@10V: 205.0mΩ
- Qg(Typ): 38.7nC
- Rth(JC): 1.9K/W
- Power Dissipation@TC 25C: 66W
- Id@TC 25C: 13A
相关文章
- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 2.9mΩ,RDS(on) Max@4.5V: 4.8m?,Qg(Typ): 130.0nC,Rth(JC): 1.1K/W,Power Dissipation@TC 25C: 113W
- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 98.0mΩ,RDS(on) Max@4.5V: 165.0mΩ,Qg(Typ): 11.0nC,Rth(JC): 62.5 (JA)K/W
- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 70.0m?,RDS(on) Max@4.5V: 130.0mΩ,Qg(Typ): 27.0nC,Rth(JC): 50 (JA)K/W
- P沟道功率MOS管,Vbrdss: -55V,Vgs: 20V,RDS(on) Max@10V: 175.0mΩ,Qg(Typ): 12.7nC,Rth(JC): 3.3K/W,Power Dissipation@TC 25C: 45W,Id@TC 25C: -12A
电气特性 Features
电气特性 Features
电气特性 Features
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | P |
| Maximum Drain Source Voltage: | 30 V |
| Maximum Continuous Drain Current: | 70 mA |
| Maximum Gate Source Voltage: | 30 V |
| Maximum Drain Gate Voltage: | 30 V |
| Operating Temperature: | -65 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |