更新于 2025-06-11电气特性 Features
- P沟道功率MOS管
- Vbrdss: -100V
- Vgs: 20V
- RDS(on) Max@10V: 205.0mΩ
- Qg(Typ): 38.7nC
- Rth(JC): 1.9K/W
- Power Dissipation@TC 25C: 66W
- Id@TC 25C: 13A
相关文章
- P沟道功率MOS管,Vbrdss: -20V,Vgs: 12V,RDS(on) Max@4.5V: 600.0mΩ,Qg(Typ): 2.4nC,Rth(JC): 230 (JA)K/W
- P沟道功率MOS管,Vbrdss: -100V,Vgs: 20V,RDS(on) Max@10V: 205.0mΩ,Qg(Typ): 38.7nC,Rth(JC): 1.9K/W,Power Dissipation@TC 25C: 66W,Id@TC 25C: 13A
- P沟道功率MOS管,Vbrdss: -20V,Vgs: 12V,RDS(on) Max@4.5V: 40.0mΩ,Qg(Typ): 32.7nC,Rth(JC): 50 (JA)K/W
- P沟道功率MOS管,Vbrdss: -100V,Vgs: 20V,RDS(on) Max@10V: 205mΩ,Qg(Typ): 38.7nC,Rth(JC): 1.9K/W,Power Dissipation@TC 25C: 66W,Id@TC 25C: -8.2A
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | P |
| Maximum Gate Source Voltage: | -25 V |
| Maximum Drain Gate Voltage: | 25 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |