更新于 2025-06-12电气特性 Features
- P沟道功率MOS管
- Vbrdss: -100V
- Vgs: 20V
- RDS(on) Max@10V: 205.0mΩ
- Qg(Typ): 38.7nC
- Rth(JC): 1.9K/W
- Power Dissipation@TC 25C: 66W
- Id@TC 25C: 13A
相关文章
- P沟道功率MOS管,Vbrdss: -55V,Vgs: 20V,RDS(on) Max@10V: 65.0mΩ,Qg(Typ): 42.0nC,Rth(JC): 1.4K/W,Power Dissipation@TC 25C: 89W,Id@TC 25C: -28A
- P沟道功率MOS管,Vbrdss: -150V,Vgs: 20V,RDS(on) Max@10V: 240.0mΩ,Qg(Typ): 33nC,Rth(JC): 50 (JA)K/W
- P沟道功率MOS管,Vbrdss: -100V,Vgs: 20V,RDS(on) Max@10V: 480mΩ,Qg(Typ): 18nC,Rth(JC): 3.2K/W,Power Dissipation@TC 25C: 39W,Id@TC 25C: -4.1A
- P沟道功率MOS管,Vbrdss: -12V,Vgs: 8V,RDS(on) Max@4.5V: 50.0mΩ,Qg(Typ): 10.0nC,Rth(JC): 100 (JA)K/W
电气特性 Features
电气特性 Features
电气特性 Features
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | P |
| Maximum Gate Source Voltage: | 30 V |
| Maximum Drain Gate Voltage: | -30 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Through Hole |
| Rad Hard: | No |