P沟道场效应管

IRF5305S

电气特性 Features

  • P沟道功率MOS管
  • Vbrdss: -55V
  • Vgs: 20V
  • RDS(on) Max@10V: 60.0mΩ
  • Qg(Typ): 42.0nC
  • Rth(JC): 1.4K/W
  • Power Dissipation@TC 25C: 110W
  • Id@TC 25C: -31A
P沟道场效应管 更新于 2025-06-12 Tag标签:P沟道场效应管

IRF4905

电气特性 Features

  • P沟道功率MOS管
  • Vbrdss: -55V
  • Vgs: 20V
  • RDS(on) Max@10V: 20.0mΩ
  • Qg(Typ): 120.0nC
  • Rth(JC): 0.75K/W
  • Power Dissipation@TC 25C: 200W
  • Id@TC 25C: -74A
P沟道场效应管 更新于 2025-06-12 Tag标签:P沟道场效应管

J177_D27Z

J177_D27Z

电气特性 Features

Configuration:Single
Channel Type:P
Maximum Gate Source Voltage:30 V
Maximum Drain Gate Voltage:-30 V
Operating Temperature:-55 to 150 ℃
Mounting:Through Hole
Rad Hard:No
P沟道场效应管 更新于 2025-06-12 Tag标签:P沟道场效应管

IRF9520N

电气特性 Features

  • P沟道功率MOS管
  • Vbrdss: -100V
  • Vgs: 20V
  • RDS(on) Max@10V: 480.0mΩ
  • Qg(Typ): 18.0nC
  • Rth(JC): 3.1K/W
  • Power Dissipation@TC 25C: 48W
  • Id@TC 25C: -6.8A
P沟道场效应管 更新于 2025-06-12 Tag标签:P沟道场效应管

IRF7416Q

IRF7416Q

电气特性 Features

  • P沟道功率MOS管
  • Vbrdss: -30V
  • Vgs: 20V
  • RDS(on) Max@10V: 20.0m?
  • RDS(on) Max@4.5V: 35.0mΩ
  • Qg(Typ): 61.0nC
  • Rth(JC): 50 (JA)K/W
P沟道场效应管 更新于 2025-06-12 Tag标签:P沟道场效应管

SMMBFJ177LT1G

SMMBFJ177LT1G

电气特性 Features

Configuration:Single
Channel Type:P
Maximum Gate Source Voltage:-25 V
Maximum Drain Gate Voltage:25 V
Operating Temperature:-55 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
P沟道场效应管 更新于 2025-06-12 Tag标签:P沟道场效应管

J176

J176

电气特性 Features

Configuration:Single
Channel Type:P
Maximum Gate Source Voltage:30 V
Maximum Drain Gate Voltage:-30 V
Operating Temperature:-55 to 150 ℃
Mounting:Through Hole
Rad Hard:No
P沟道场效应管 更新于 2025-06-12 Tag标签:P沟道场效应管

PMBFJ175,215

PMBFJ175,215

电气特性 Features

Configuration:Single
Channel Type:P
Maximum Drain Source Voltage:30 V
Maximum Continuous Drain Current:70 mA
Maximum Gate Source Voltage:30 V
Maximum Drain Gate Voltage:30 V
Operating Temperature:-65 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
P沟道场效应管 更新于 2025-06-12 Tag标签:P沟道场效应管

IRLMS5703

电气特性 Features

  • P沟道功率MOS管
  • Vbrdss: -30V
  • Vgs: 20V
  • RDS(on) Max@10V: 200.0mΩ
  • RDS(on) Max@4.5V: 400.0mΩ
  • Qg(Typ): 7.2nC
  • Rth(JC): 75 (JA)K/W
P沟道场效应管 更新于 2025-06-12 Tag标签:P沟道场效应管

IRF6217

IRF6217

电气特性 Features

  • P沟道功率MOS管
  • Vbrdss: -150V
  • Vgs: 20V
  • RDS(on) Max@10V: 2400.0mΩ
  • Qg(Typ): 6.0nC
  • Rth(JC): 20K/W
P沟道场效应管 更新于 2025-06-12 Tag标签:P沟道场效应管

IRLML6401

电气特性 Features

  • P沟道功率MOS管
  • Vbrdss: -12V
  • Vgs: 8V
  • RDS(on) Max@4.5V: 50.0mΩ
  • Qg(Typ): 10.0nC
  • Rth(JC): 100 (JA)K/W
P沟道场效应管 更新于 2025-06-12 Tag标签:P沟道场效应管

PMBFJ176,215

PMBFJ176,215

电气特性 Features

Configuration:Single
Channel Type:P
Maximum Drain Source Voltage:30 V
Maximum Continuous Drain Current:35 mA
Maximum Gate Source Voltage:30 V
Maximum Drain Gate Voltage:30 V
Operating Temperature:-65 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
P沟道场效应管 更新于 2025-06-12 Tag标签:P沟道场效应管

IRF9310PBF-1

IRF9310PBF-1

电气特性 Features

  • P沟道功率MOS管
  • Vbrdss: -30V
  • Vgs: 20V
  • RDS(on) Max@10V: 4.6mΩ
  • RDS(on) Max@4.5V: 6.8mΩ
  • Qg(Typ): 110nC
  • Rth(JC): 50 (JA)K/W
P沟道场效应管 更新于 2025-06-12 Tag标签:P沟道场效应管

IRFY9120

电气特性 Features

  • P沟道功率MOS管
  • Vbrdss: -100V
  • Vgs: 20V
  • Id@TC 25C: -5.3A
P沟道场效应管 更新于 2025-06-12 Tag标签:P沟道场效应管

MMBFJ271

MMBFJ271

电气特性 Features

Configuration:Single
Channel Type:P
Maximum Gate Source Voltage:30 V
Maximum Drain Gate Voltage:-30 V
Operating Temperature:-55 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
P沟道场效应管 更新于 2025-06-12 Tag标签:P沟道场效应管