IRF9332

电气特性 Features
- P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 17.5m?
- RDS(on) Max@4.5V: 28.1mΩ
- Qg(Typ): 14.0nC
- Rth(JC): 50 (JA)K/W
MMBFJ176

电气特性 Features
Configuration: | Single |
Channel Type: | P |
Maximum Gate Source Voltage: | 30 V |
Maximum Drain Gate Voltage: | -30 V |
Operating Temperature: | -55 to 150 ℃ |
Mounting: | Surface Mount |
Rad Hard: | No |
IRF7321D2

电气特性 Features
- 集成肖特基二极管的P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 62.0m?
- RDS(on) Max@4.5V: 98.0mΩ
- Qg(Typ): 23.0nC
- Rth(JC): 62.5 (JA)K/W
IRF5806
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -20V
- Vgs: 20V
- RDS(on) Max@4.5V: 86.0mΩ
- Qg(Typ): 8.3nC
- Rth(JC): 62.5 (JA)K/W
- Power Dissipation@TC 25C: 2.0W
- Id@TC 25C: -4.0A
IRLML6402TRPBF-1
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -20V
- Vgs: 12V
- RDS(on) Max@4.5V: 65.0mΩ
- Qg(Typ): 8.0nC
- Rth(JC): 75 (JA)K/W
IRF9328

电气特性 Features
- P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 11.9mΩ
- RDS(on) Max@4.5V: 19.7mΩ
- Qg(Typ): 18.0nC
- Rth(JC): 50 (JA)K/W
IRF5803D2

电气特性 Features
- 集成肖特基二极管的P沟道功率MOS管
- Vbrdss: -40V
- Vgs: 20V
- RDS(on) Max@10V: 112.0mΩ
- RDS(on) Max@4.5V: 190.0mΩ
- Qg(Typ): 25.0nC
- Rth(JC): 62.5 (JA)K/W
IRFU5410
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -100V
- Vgs: 20V
- RDS(on) Max@10V: 205mΩ
- Qg(Typ): 38.7nC
- Rth(JC): 1.9K/W
- Power Dissipation@TC 25C: 66W
- Id@TC 25C: -8.2A
IRLML5103
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 600.0mΩ
- RDS(on) Max@4.5V: 1000.0mΩ
- Qg(Typ): 3.4nC
- Rth(JC): 230 (JA)K/W
IRLML5103TRPBF-1
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 600.0mΩ
- RDS(on) Max@4.5V: 1000.0mΩ
- Qg(Typ): 3.4nC
- Rth(JC): 230 (JA)K/W
MMBF5460

电气特性 Features
Configuration: | Single |
Channel Type: | P |
Maximum Gate Source Voltage: | 40 V |
Maximum Drain Gate Voltage: | -40 V |
Operating Temperature: | -55 to 150 ℃ |
Mounting: | Surface Mount |
Rad Hard: | No |
IRF7726
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 26.0mΩ
- RDS(on) Max@4.5V: 40.0mΩ
- Qg(Typ): 46.0nC
- Rth(JC): 70 (JA)K/W
IRF9310PBF-1

电气特性 Features
- P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 4.6mΩ
- RDS(on) Max@4.5V: 6.8mΩ
- Qg(Typ): 110nC
- Rth(JC): 50 (JA)K/W
IRFH9310
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 4.6m?
- RDS(on) Max@4.5V: 7.1mΩ
- Qg(Typ): 58.0nC
- Rth(JC): 1.6K/W
- Id@TC 25C: -40A
IRF9530NS
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -100V
- Vgs: 20V
- RDS(on) Max@10V: 200.0mΩ
- Qg(Typ): 38.7nC
- Rth(JC): 1.9K/W
- Power Dissipation@TC 25C: 3.8W
- Id@TC 25C: -14A